Permanent ferroelectric retention of BiFeO(3) mesocrystal

Non-volatile electronic devices based on magnetoelectric multiferroics have triggered new possibilities of outperforming conventional devices for applications. However, ferroelectric reliability issues, such as imprint, retention and fatigue, must be solved before the realization of practical device...

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Udgivet i:Nat Commun
Main Authors: Hsieh, Ying-Hui, Xue, Fei, Yang, Tiannan, Liu, Heng-Jui, Zhu, Yuanmin, Chen, Yi-Chun, Zhan, Qian, Duan, Chun-Gang, Chen, Long-Qing, He, Qing, Chu, Ying-Hao
Format: Artigo
Sprog:Inglês
Udgivet: Nature Publishing Group 2016
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Article
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC5095170/
https://ncbi.nlm.nih.gov/pubmed/27782123
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms13199
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