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Permanent ferroelectric retention of BiFeO(3) mesocrystal

Non-volatile electronic devices based on magnetoelectric multiferroics have triggered new possibilities of outperforming conventional devices for applications. However, ferroelectric reliability issues, such as imprint, retention and fatigue, must be solved before the realization of practical device...

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Dades bibliogràfiques
Publicat a:Nat Commun
Autors principals: Hsieh, Ying-Hui, Xue, Fei, Yang, Tiannan, Liu, Heng-Jui, Zhu, Yuanmin, Chen, Yi-Chun, Zhan, Qian, Duan, Chun-Gang, Chen, Long-Qing, He, Qing, Chu, Ying-Hao
Format: Artigo
Idioma:Inglês
Publicat: Nature Publishing Group 2016
Matèries:
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC5095170/
https://ncbi.nlm.nih.gov/pubmed/27782123
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms13199
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