Permanent ferroelectric retention of BiFeO(3) mesocrystal

Non-volatile electronic devices based on magnetoelectric multiferroics have triggered new possibilities of outperforming conventional devices for applications. However, ferroelectric reliability issues, such as imprint, retention and fatigue, must be solved before the realization of practical device...

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Detalhes bibliográficos
Publicado no:Nat Commun
Main Authors: Hsieh, Ying-Hui, Xue, Fei, Yang, Tiannan, Liu, Heng-Jui, Zhu, Yuanmin, Chen, Yi-Chun, Zhan, Qian, Duan, Chun-Gang, Chen, Long-Qing, He, Qing, Chu, Ying-Hao
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2016
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5095170/
https://ncbi.nlm.nih.gov/pubmed/27782123
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms13199
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