Permanent ferroelectric retention of BiFeO(3) mesocrystal

Non-volatile electronic devices based on magnetoelectric multiferroics have triggered new possibilities of outperforming conventional devices for applications. However, ferroelectric reliability issues, such as imprint, retention and fatigue, must be solved before the realization of practical device...

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Veröffentlicht in:Nat Commun
Hauptverfasser: Hsieh, Ying-Hui, Xue, Fei, Yang, Tiannan, Liu, Heng-Jui, Zhu, Yuanmin, Chen, Yi-Chun, Zhan, Qian, Duan, Chun-Gang, Chen, Long-Qing, He, Qing, Chu, Ying-Hao
Format: Artigo
Sprache:Inglês
Veröffentlicht: Nature Publishing Group 2016
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Article
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC5095170/
https://ncbi.nlm.nih.gov/pubmed/27782123
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms13199
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