Permanent ferroelectric retention of BiFeO(3) mesocrystal

Non-volatile electronic devices based on magnetoelectric multiferroics have triggered new possibilities of outperforming conventional devices for applications. However, ferroelectric reliability issues, such as imprint, retention and fatigue, must be solved before the realization of practical device...

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Bibliografske podrobnosti
izdano v:Nat Commun
Main Authors: Hsieh, Ying-Hui, Xue, Fei, Yang, Tiannan, Liu, Heng-Jui, Zhu, Yuanmin, Chen, Yi-Chun, Zhan, Qian, Duan, Chun-Gang, Chen, Long-Qing, He, Qing, Chu, Ying-Hao
Format: Artigo
Jezik:Inglês
Izdano: Nature Publishing Group 2016
Teme:
Article
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC5095170/
https://ncbi.nlm.nih.gov/pubmed/27782123
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms13199
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