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Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy
In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunne...
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| Publicado no: | Sci Technol Adv Mater |
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| Main Authors: | , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Taylor & Francis
2012
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5090291/ https://ncbi.nlm.nih.gov/pubmed/27877466 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1088/1468-6996/13/1/013002 |
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