Side‐Gated In(2)O(3) Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications

A new type of ferroelectric FET based on the single nanowire is demonstrated. The design of the side‐gated architecture not only simplifies the manufacturing process but also avoids any postdeposition damage to the organic ferroelectric film. The devices exhibit excellent performances for nonvolatil...

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Bibliografski detalji
Izdano u:Adv Sci (Weinh)
Glavni autori: Su, Meng, Yang, Zhenyu, Liao, Lei, Zou, Xuming, Ho, Johnny C., Wang, Jingli, Wang, Jianlu, Hu, Weida, Xiao, Xiangheng, Jiang, Changzhong, Liu, Chuansheng, Guo, Tailiang
Format: Artigo
Jezik:Inglês
Izdano: John Wiley and Sons Inc. 2016
Teme:
Communications
Online pristup:https://ncbi.nlm.nih.gov/pmc/articles/PMC5039971/
https://ncbi.nlm.nih.gov/pubmed/27711260
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201600078
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