Side‐Gated In(2)O(3) Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications

A new type of ferroelectric FET based on the single nanowire is demonstrated. The design of the side‐gated architecture not only simplifies the manufacturing process but also avoids any postdeposition damage to the organic ferroelectric film. The devices exhibit excellent performances for nonvolatil...

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Udgivet i:Adv Sci (Weinh)
Main Authors: Su, Meng, Yang, Zhenyu, Liao, Lei, Zou, Xuming, Ho, Johnny C., Wang, Jingli, Wang, Jianlu, Hu, Weida, Xiao, Xiangheng, Jiang, Changzhong, Liu, Chuansheng, Guo, Tailiang
Format: Artigo
Sprog:Inglês
Udgivet: John Wiley and Sons Inc. 2016
Fag:
Communications
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC5039971/
https://ncbi.nlm.nih.gov/pubmed/27711260
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201600078
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