טוען...
Disorder Control in Crystalline GeSb(2)Te(4) Using High Pressure
Electronic phase‐change memory devices take advantage of the different resistivity of two states, amorphous and crystalline, and the swift transitions between them in active phase‐change materials (PCMs). In addition to these two distinct phases, multiple resistive states can be obtained by tuning t...
שמור ב:
| הוצא לאור ב: | Adv Sci (Weinh) |
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| Main Authors: | , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
John Wiley and Sons Inc.
2015
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5034799/ https://ncbi.nlm.nih.gov/pubmed/27708999 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201500117 |
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