Lataa...
Disorder Control in Crystalline GeSb(2)Te(4) Using High Pressure
Electronic phase‐change memory devices take advantage of the different resistivity of two states, amorphous and crystalline, and the swift transitions between them in active phase‐change materials (PCMs). In addition to these two distinct phases, multiple resistive states can be obtained by tuning t...
Tallennettuna:
| Julkaisussa: | Adv Sci (Weinh) |
|---|---|
| Päätekijät: | , , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
John Wiley and Sons Inc.
2015
|
| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5034799/ https://ncbi.nlm.nih.gov/pubmed/27708999 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201500117 |
| Tagit: |
Lisää tagi
Ei tageja, Lisää ensimmäinen tagi!
|