लोड हो रहा है...
Disorder Control in Crystalline GeSb(2)Te(4) Using High Pressure
Electronic phase‐change memory devices take advantage of the different resistivity of two states, amorphous and crystalline, and the swift transitions between them in active phase‐change materials (PCMs). In addition to these two distinct phases, multiple resistive states can be obtained by tuning t...
में बचाया:
| में प्रकाशित: | Adv Sci (Weinh) |
|---|---|
| मुख्य लेखकों: | , , , |
| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
John Wiley and Sons Inc.
2015
|
| विषय: | |
| ऑनलाइन पहुंच: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5034799/ https://ncbi.nlm.nih.gov/pubmed/27708999 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201500117 |
| टैग : |
टैग जोड़ें
कोई टैग नहीं, इस रिकॉर्ड को टैग करने वाले पहले व्यक्ति बनें!
|