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Grain Boundary Induced Bias Instability in Soluble Acene-Based Thin-Film Transistors
Since the grain boundaries (GBs) within the semiconductor layer of organic field-effect transistors (OFETs) have a strong influence on device performance, a substantial number of studies have been devoted to controlling the crystallization characteristics of organic semiconductors. We studied the in...
Gorde:
| Argitaratua izan da: | Sci Rep |
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| Egile Nagusiak: | , , , , , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Nature Publishing Group
2016
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| Gaiak: | |
| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5018961/ https://ncbi.nlm.nih.gov/pubmed/27615358 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep33224 |
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