Modeling of Field Effect Mobility Using Grain Boundaries on Nanocrystalline Silicon Thin-Film Transistor (nc-Si TFT)
This work presents the effect of grain boundaries in nanocrystalline silicon thin-film transistors (nc-Si TFT). In this study, it is assumed that the nanocrystalline silicon film which is used as the channel material in TFT consists of grain boundaries perpendicular as well as parallel to the carri...
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| Autori principali: | , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Sumy State University
2014-01-01
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| Serie: | Журнал нано- та електронної фізики |
| Soggetti: | |
| Accesso online: | http://jnep.sumdu.edu.ua/download/numbers/2013/4/articles/jnep_2013_V5_04054.pdf |
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