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Status and Prospects of ZnO-Based Resistive Switching Memory Devices
In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices ha...
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| Опубликовано в: : | Nanoscale Res Lett |
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| Главные авторы: | , , , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Springer US
2016
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| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4991985/ https://ncbi.nlm.nih.gov/pubmed/27541816 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1570-y |
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