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Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100)
We study the surface morphology and chemical composition of SiGe layers after their formation under high-temperature annealing at 800–1100 °C of 30–150 nm Ge layers deposited on Si(100) at 400–500 °C. It is found that the annealing leads to the appearance of the SiGe layers of two types, i.e., porou...
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| Publicat a: | Nanoscale Res Lett |
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| Autors principals: | , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer US
2016
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4991982/ https://ncbi.nlm.nih.gov/pubmed/27541814 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1588-1 |
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