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Controlled creation and displacement of charged domain walls in ferroelectric thin films
Charged domain walls in ferroelectric materials are of high interest due to their potential use in nanoelectronic devices. While previous approaches have utilized complex scanning probe techniques or frustrative poling here we show the creation of charged domain walls in ferroelectric thin films dur...
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| Опубликовано в: : | Sci Rep |
|---|---|
| Главные авторы: | , , , , , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Nature Publishing Group
2016
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| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4979207/ https://ncbi.nlm.nih.gov/pubmed/27507433 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep31323 |
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