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Controlled creation and displacement of charged domain walls in ferroelectric thin films

Charged domain walls in ferroelectric materials are of high interest due to their potential use in nanoelectronic devices. While previous approaches have utilized complex scanning probe techniques or frustrative poling here we show the creation of charged domain walls in ferroelectric thin films dur...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Feigl, L., Sluka, T., McGilly, L. J., Crassous, A., Sandu, C. S., Setter, N.
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2016
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4979207/
https://ncbi.nlm.nih.gov/pubmed/27507433
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep31323
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