Controlled creation and displacement of charged domain walls in ferroelectric thin films

Charged domain walls in ferroelectric materials are of high interest due to their potential use in nanoelectronic devices. While previous approaches have utilized complex scanning probe techniques or frustrative poling here we show the creation of charged domain walls in ferroelectric thin films dur...

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Bibliographic Details
Published in:Sci Rep
Main Authors: Feigl, L., Sluka, T., McGilly, L. J., Crassous, A., Sandu, C. S., Setter, N.
Format: Artigo
Language:Inglês
Published: Nature Publishing Group 2016
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Article
Online Access:https://ncbi.nlm.nih.gov/pmc/articles/PMC4979207/
https://ncbi.nlm.nih.gov/pubmed/27507433
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep31323
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