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Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric
Two different growth modes of large-area hexagonal boron nitride (h-BN) film, a conventional chemical vapor deposition (CVD) growth mode and a high-pressure CVD growth mode, were compared as a function of the precursor partial pressure. Conventional self-limited CVD growth was obtained below a criti...
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| Vydáno v: | Sci Rep |
|---|---|
| Hlavní autoři: | , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group
2016
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4960585/ https://ncbi.nlm.nih.gov/pubmed/27458024 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep30449 |
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