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Synthesis of large-area multilayer hexagonal boron nitride for high material performance
Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized...
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| Publicado no: | Nat Commun |
|---|---|
| Main Authors: | , , , , , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Pub. Group
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4639899/ https://ncbi.nlm.nih.gov/pubmed/26507400 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms9662 |
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