Synthesis of large-area multilayer hexagonal boron nitride for high material performance

Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized...

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Bibliografiset tiedot
Julkaisussa:Nat Commun
Päätekijät: Kim, Soo Min, Hsu, Allen, Park, Min Ho, Chae, Sang Hoon, Yun, Seok Joon, Lee, Joo Song, Cho, Dae-Hyun, Fang, Wenjing, Lee, Changgu, Palacios, Tomás, Dresselhaus, Mildred, Kim, Ki Kang, Lee, Young Hee, Kong, Jing
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Nature Pub. Group 2015
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Article
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC4639899/
https://ncbi.nlm.nih.gov/pubmed/26507400
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms9662
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