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Optical Properties of a Quantum Dot-Ring System Grown Using Droplet Epitaxy
Electronic and optical properties of InAs/GaAs nanostructures grown by the droplet epitaxy method are studied. Carrier states were determined by k·p theory including effects of strain and In gradient concentration for a model geometry. Wavefunctions are highly localized in the dots. Coulomb and exch...
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| Publicado no: | Nanoscale Res Lett |
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| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4920786/ https://ncbi.nlm.nih.gov/pubmed/27342603 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1518-2 |
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