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Optical Properties of a Quantum Dot-Ring System Grown Using Droplet Epitaxy
Electronic and optical properties of InAs/GaAs nanostructures grown by the droplet epitaxy method are studied. Carrier states were determined by k·p theory including effects of strain and In gradient concentration for a model geometry. Wavefunctions are highly localized in the dots. Coulomb and exch...
Zapisane w:
| Wydane w: | Nanoscale Res Lett |
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| Główni autorzy: | , , , , , , , , |
| Format: | Artigo |
| Język: | Inglês |
| Wydane: |
Springer US
2016
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| Hasła przedmiotowe: | |
| Dostęp online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4920786/ https://ncbi.nlm.nih.gov/pubmed/27342603 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1518-2 |
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