Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe

Commercial magnetic memories rely on the bistability of ordered spins in ferromagnetic materials. Recently, experimental bistable memories have been realized using fully compensated antiferromagnetic metals. Here we demonstrate a multiple-stable memory device in epitaxial MnTe, an antiferromagnetic...

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Bibliographic Details
Published in:Nat Commun
Main Authors: Kriegner, D., Výborný, K., Olejník, K., Reichlová, H., Novák, V., Marti, X., Gazquez, J., Saidl, V., Němec, P., Volobuev, V. V., Springholz, G., Holý, V., Jungwirth, T.
Format: Artigo
Language:Inglês
Published: Nature Publishing Group 2016
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Online Access:https://ncbi.nlm.nih.gov/pmc/articles/PMC4906165/
https://ncbi.nlm.nih.gov/pubmed/27279433
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms11623
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