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Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe
Commercial magnetic memories rely on the bistability of ordered spins in ferromagnetic materials. Recently, experimental bistable memories have been realized using fully compensated antiferromagnetic metals. Here we demonstrate a multiple-stable memory device in epitaxial MnTe, an antiferromagnetic...
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| Publicado no: | Nat Commun |
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| Main Authors: | , , , , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4906165/ https://ncbi.nlm.nih.gov/pubmed/27279433 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms11623 |
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