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Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers
A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4614445/ https://ncbi.nlm.nih.gov/pubmed/26486931 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep15498 |
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