Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers

A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the...

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Udgivet i:Sci Rep
Main Authors: Wang, K., Sanderink, J. G. M., Bolhuis, T., van der Wiel, W. G., de Jong, M. P.
Format: Artigo
Sprog:Inglês
Udgivet: Nature Publishing Group 2015
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Article
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC4614445/
https://ncbi.nlm.nih.gov/pubmed/26486931
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep15498
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