Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe

Commercial magnetic memories rely on the bistability of ordered spins in ferromagnetic materials. Recently, experimental bistable memories have been realized using fully compensated antiferromagnetic metals. Here we demonstrate a multiple-stable memory device in epitaxial MnTe, an antiferromagnetic...

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Bibliografske podrobnosti
izdano v:Nat Commun
Main Authors: Kriegner, D., Výborný, K., Olejník, K., Reichlová, H., Novák, V., Marti, X., Gazquez, J., Saidl, V., Němec, P., Volobuev, V. V., Springholz, G., Holý, V., Jungwirth, T.
Format: Artigo
Jezik:Inglês
Izdano: Nature Publishing Group 2016
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Article
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC4906165/
https://ncbi.nlm.nih.gov/pubmed/27279433
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms11623
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