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Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS(2) MOSFET with an AlN Interfacial Layer
Transistors based on MoS(2) and other TMDs have been widely studied. The dangling-bond free surface of MoS(2) has made the deposition of high-quality high-k dielectrics on MoS(2) a challenge. The resulted transistors often suffer from the threshold voltage instability induced by the high density tra...
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| Publicado no: | Sci Rep |
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| Main Authors: | , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4899804/ https://ncbi.nlm.nih.gov/pubmed/27279454 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep27676 |
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