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Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer

A novel ion-imprinted electrochemical sensor based on AlGaN/GaN high electron mobility transistors (HEMTs) was developed to detect trace amounts of phosphate anion. This sensor combined the advantages of the ion sensitivity of AlGaN/GaN HEMTs and specific recognition of ion imprinted polymers. The c...

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Detaylı Bibliyografya
Yayımlandı:Sci Rep
Asıl Yazarlar: Jia, Xiuling, Chen, Dunjun, Bin, Liu, Lu, Hai, Zhang, Rong, Zheng, Youdou
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: Nature Publishing Group 2016
Konular:
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC4899738/
https://ncbi.nlm.nih.gov/pubmed/27278795
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep27728
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