Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer

Lignende værker

• AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts
  af: Wojtasiak, Wojciech, et al.
  Udgivet: (2018)
• High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
  af: Lee, Ya-Ju, et al.
  Udgivet: (2014)
• AlGaN/GaN high electron mobility transistors for protein–peptide binding affinity study
  af: Huang, Chih-Cheng, et al.
  Udgivet: (2013)
• Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal
  af: Chia-Hao Liu, et al.
  Udgivet: (2020-01-01)
• Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors
  af: Lin, Yu-Shyan, et al.
  Udgivet: (2020)