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Effect of Oxidation Condition on Growth of N: ZnO Prepared by Oxidizing Sputtering Zn-N Film
Nitrogen-doped zinc oxide (N: ZnO) films have been prepared by oxidizing reactive RF magnetron-sputtering zinc nitride (Zn-N) films. The effect of oxidation temperature and oxidation time on the growth, transmittance, and electrical properties of the film has been explored. The results show that bot...
Gorde:
| Argitaratua izan da: | Nanoscale Res Lett |
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| Egile Nagusiak: | , , , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Springer US
2016
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| Gaiak: | |
| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4889532/ https://ncbi.nlm.nih.gov/pubmed/27251324 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1485-7 |
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