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Interface Engineering for the Enhancement of Carrier Transport in Black Phosphorus Transistor with Ultra-Thin High-k Gate Dielectric
Black phosphorus (BP) is the most stable allotrope of phosphorus which exhibits strong in-plane anisotropic charge transport. Discovering its interface properties between BP and high-k gate dielectric is fundamentally important for enhancing the carrier mobility and electrostatics control. Here, we...
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| Publicat a: | Sci Rep |
|---|---|
| Autors principals: | , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group
2016
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4879535/ https://ncbi.nlm.nih.gov/pubmed/27222074 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep26609 |
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