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Nucleation and growth of (10(¯)11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy
Wurtzite AlN is widely used for deep ultraviolet optoelectronic devices (DUV), which are generally grown along the [0001]-direction of the wurtzite structure on currently available substrates. However, huge internal electrostatic fields are presented within the material along [0001] axis induced by...
Gorde:
| Argitaratua izan da: | Sci Rep |
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| Egile Nagusiak: | , , , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Nature Publishing Group
2016
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| Gaiak: | |
| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4877591/ https://ncbi.nlm.nih.gov/pubmed/27185345 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep26040 |
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