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Intentional polarity conversion of AlN epitaxial layers by oxygen
Nitride materials (AlN, GaN, InN and their alloys) are commonly used in optoelectronics, high-power and high-frequency electronics. Polarity is the essential characteristic of these materials: when grown along c-direction, the films may exhibit either N- or metal-polar surface, which strongly influe...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6147946/ https://ncbi.nlm.nih.gov/pubmed/30237522 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-32489-w |
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