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Electronic and chemical structure of the H(2)O/GaN(0001) interface under ambient conditions
We employed ambient pressure X-ray photoelectron spectroscopy to investigate the electronic and chemical properties of the H(2)O/GaN(0001) interface under elevated pressures and/or temperatures. A pristine GaN(0001) surface exhibited upward band bending, which was partially flattened when exposed to...
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| Publicado no: | Sci Rep |
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| Main Authors: | , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4843015/ https://ncbi.nlm.nih.gov/pubmed/27108711 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep24848 |
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