Zhang, X., & Ptasinska, S. (2016). Electronic and chemical structure of the H(2)O/GaN(0001) interface under ambient conditions. Sci Rep.
Chicago-стиль цитированияZhang, Xueqiang, and Sylwia Ptasinska. "Electronic and Chemical Structure of the H(2)O/GaN(0001) Interface Under Ambient Conditions." Sci Rep 2016.
MLA-цитированиеZhang, Xueqiang, and Sylwia Ptasinska. "Electronic and Chemical Structure of the H(2)O/GaN(0001) Interface Under Ambient Conditions." Sci Rep 2016.
Предупреждение: эти цитированмия не могут быть всегда правильны на 100%.