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Emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional structure
In our experiment, it was observed that the emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional (1D) structure. The results of experiment and calculation demonstrate that the uniaxial tensile strain in the (111) and (110) direction can efficiently transform Ge to a direct...
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| Publié dans: | Sci Rep |
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| Auteurs principaux: | , , , , , , |
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Nature Publishing Group
2016
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| Sujets: | |
| Accès en ligne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4838848/ https://ncbi.nlm.nih.gov/pubmed/27097990 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep24802 |
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