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Emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional structure

In our experiment, it was observed that the emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional (1D) structure. The results of experiment and calculation demonstrate that the uniaxial tensile strain in the (111) and (110) direction can efficiently transform Ge to a direct...

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Bibliografske podrobnosti
izdano v:Sci Rep
Main Authors: Huang, Zhong-Mei, Huang, Wei-Qi, Liu, Shi-Rong, Dong, Tai-Ge, Wang, Gang, Wu, Xue-Ke, Qin, Cao-Jian
Format: Artigo
Jezik:Inglês
Izdano: Nature Publishing Group 2016
Teme:
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC4838848/
https://ncbi.nlm.nih.gov/pubmed/27097990
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep24802
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