Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

By employing a single AlGaN layer with low Al composition, high quality and uniformity AlGaN/GaN heterostructures have been successfully grown on Si substrates by metal-organic chemical vapor deposition (MOCVD). The heterostructures exhibit a high electron mobility of 2150 cm(2)/Vs with an electron...

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Udgivet i:Sci Rep
Main Authors: Cheng, Jianpeng, Yang, Xuelin, Sang, Ling, Guo, Lei, Zhang, Jie, Wang, Jiaming, He, Chenguang, Zhang, Lisheng, Wang, Maojun, Xu, Fujun, Tang, Ning, Qin, Zhixin, Wang, Xinqiang, Shen, Bo
Format: Artigo
Sprog:Inglês
Udgivet: Nature Publishing Group 2016
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Article
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC4785338/
https://ncbi.nlm.nih.gov/pubmed/26960730
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep23020
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