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Graphene growth on Ge(100)/Si(100) substrates by CVD method
The successful integration of graphene into microelectronic devices is strongly dependent on the availability of direct deposition processes, which can provide uniform, large area and high quality graphene on nonmetallic substrates. As of today the dominant technology is based on Si and obtaining gr...
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| Udgivet i: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Nature Publishing Group
2016
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4761869/ https://ncbi.nlm.nih.gov/pubmed/26899732 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep21773 |
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