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Direct growth of graphene on Ge(100) and Ge(110) via thermal and plasma enhanced CVD
The integration of graphene into CMOS compatible Ge technology is in particular attractive for optoelectronic devices in the infrared spectral range. Since graphene transfer from metal substrates has detrimental effects on the electrical properties of the graphene film and moreover, leads to severe...
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| Foilsithe in: | Sci Rep |
|---|---|
| Main Authors: | , , , , |
| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe: |
Nature Publishing Group UK
2020
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| Ábhair: | |
| Rochtain Ar Líne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7395096/ https://ncbi.nlm.nih.gov/pubmed/32737382 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-69846-7 |
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