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Graphene growth on Ge(100)/Si(100) substrates by CVD method
The successful integration of graphene into microelectronic devices is strongly dependent on the availability of direct deposition processes, which can provide uniform, large area and high quality graphene on nonmetallic substrates. As of today the dominant technology is based on Si and obtaining gr...
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| 出版年: | Sci Rep |
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| 主要な著者: | , , , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Nature Publishing Group
2016
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4761869/ https://ncbi.nlm.nih.gov/pubmed/26899732 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep21773 |
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