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Athermal domain-wall creep near a ferroelectric quantum critical point
Ferroelectric domain walls are typically stationary because of the presence of a pinning potential. Nevertheless, thermally activated, irreversible creep motion can occur under a moderate electric field, thereby underlying rewritable and non-volatile memory applications. Conversely, as the temperatu...
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| 出版年: | Nat Commun |
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| 主要な著者: | , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Nature Publishing Group
2016
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4757756/ https://ncbi.nlm.nih.gov/pubmed/26880041 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms10675 |
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