Caricamento...
Athermal domain-wall creep near a ferroelectric quantum critical point
Ferroelectric domain walls are typically stationary because of the presence of a pinning potential. Nevertheless, thermally activated, irreversible creep motion can occur under a moderate electric field, thereby underlying rewritable and non-volatile memory applications. Conversely, as the temperatu...
Salvato in:
| Pubblicato in: | Nat Commun |
|---|---|
| Autori principali: | , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Nature Publishing Group
2016
|
| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4757756/ https://ncbi.nlm.nih.gov/pubmed/26880041 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms10675 |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne! !
|