Electrical in-situ characterisation of interface stabilised organic thin-film transistors

We report on the electrical in-situ characterisation of organic thin film transistors under high vacuum conditions. Model devices in a bottom-gate/bottom-contact (coplanar) configuration are electrically characterised in-situ, monolayer by monolayer (ML), while the organic semiconductor (OSC) is eva...

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Publicado en:Phys Status Solidi Rapid Res Lett
Main Authors: Striedinger, Bernd, Fian, Alexander, Petritz, Andreas, Lassnig, Roman, Winkler, Adolf, Stadlober, Barbara
Formato: Artigo
Idioma:Inglês
Publicado: 2015
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Article
Acceso en liña:https://ncbi.nlm.nih.gov/pmc/articles/PMC4599138/
https://ncbi.nlm.nih.gov/pubmed/26457122
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/pssr.201510169
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