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Electrical in-situ characterisation of interface stabilised organic thin-film transistors
We report on the electrical in-situ characterisation of organic thin film transistors under high vacuum conditions. Model devices in a bottom-gate/bottom-contact (coplanar) configuration are electrically characterised in-situ, monolayer by monolayer (ML), while the organic semiconductor (OSC) is eva...
Wedi'i Gadw mewn:
| Cyhoeddwyd yn: | Phys Status Solidi Rapid Res Lett |
|---|---|
| Prif Awduron: | , , , , , |
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
2015
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| Pynciau: | |
| Mynediad Ar-lein: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4599138/ https://ncbi.nlm.nih.gov/pubmed/26457122 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/pssr.201510169 |
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