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Visualization of GaN surface potential using terahertz emission enhanced by local defects

Wide-gap semiconductors have received significant attention for their advantages over existing semiconductors in energy-efficient power devices. To realize stable and reliable wide-gap semiconductor devices, the basic physical properties, such as the electric properties on the surface and at the int...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Sakai, Yuji, Kawayama, Iwao, Nakanishi, Hidetoshi, Tonouchi, Masayoshi
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2015
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4563355/
https://ncbi.nlm.nih.gov/pubmed/26350203
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep13860
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