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Visualization of GaN surface potential using terahertz emission enhanced by local defects
Wide-gap semiconductors have received significant attention for their advantages over existing semiconductors in energy-efficient power devices. To realize stable and reliable wide-gap semiconductor devices, the basic physical properties, such as the electric properties on the surface and at the int...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4563355/ https://ncbi.nlm.nih.gov/pubmed/26350203 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep13860 |
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