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Influence of Vacancy Defect on Surface Feature and Adsorption of Cs on GaN(0001) Surface

The effects of Ga and N vacancy defect on the change in surface feature, work function, and characteristic of Cs adsorption on a (2 × 2) GaN(0001) surface have been investigated using density functional theory with a plane-wave ultrasoft pseudopotential method based on first-principles calculations....

Deskribapen osoa

Gorde:
Xehetasun bibliografikoak
Egile Nagusiak: Ji, Yanjun, Du, Yujie, Wang, Meishan
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: Hindawi Publishing Corporation 2014
Gaiak:
Sarrera elektronikoa:https://ncbi.nlm.nih.gov/pmc/articles/PMC4121101/
https://ncbi.nlm.nih.gov/pubmed/25126599
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1155/2014/490853
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