Načítá se...
Influence of Vacancy Defect on Surface Feature and Adsorption of Cs on GaN(0001) Surface
The effects of Ga and N vacancy defect on the change in surface feature, work function, and characteristic of Cs adsorption on a (2 × 2) GaN(0001) surface have been investigated using density functional theory with a plane-wave ultrasoft pseudopotential method based on first-principles calculations....
Uloženo v:
| Hlavní autoři: | , , |
|---|---|
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Hindawi Publishing Corporation
2014
|
| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4121101/ https://ncbi.nlm.nih.gov/pubmed/25126599 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1155/2014/490853 |
| Tagy: |
Přidat tag
Žádné tagy, Buďte první, kdo otaguje tento záznam!
|