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Influence of Vacancy Defect on Surface Feature and Adsorption of Cs on GaN(0001) Surface
The effects of Ga and N vacancy defect on the change in surface feature, work function, and characteristic of Cs adsorption on a (2 × 2) GaN(0001) surface have been investigated using density functional theory with a plane-wave ultrasoft pseudopotential method based on first-principles calculations....
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| Главные авторы: | , , |
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| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Hindawi Publishing Corporation
2014
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| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4121101/ https://ncbi.nlm.nih.gov/pubmed/25126599 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1155/2014/490853 |
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