Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Owing to its relativistic low-energy charge carriers, the interaction between graphene and various impurities leads to a wealth of new physics and degrees of freedom to control electronic devices. In particular, the behavior of graphene’s charge carriers in response to potentials from charged Coulom...

詳細記述

保存先:
書誌詳細
出版年:J Vis Exp
主要な著者: Jung, Han Sae, Tsai, Hsin-Zon, Wong, Dillon, Germany, Chad, Kahn, Salman, Kim, Youngkyou, Aikawa, Andrew S., Desai, Dhruv K., Rodgers, Griffin F., Bradley, Aaron J., Velasco, Jairo, Watanabe, Kenji, Taniguchi, Takashi, Wang, Feng, Zettl, Alex, Crommie, Michael F.
フォーマット: Artigo
言語:Inglês
出版事項: MyJove Corporation 2015
主題:
Engineering
オンライン･アクセス:https://ncbi.nlm.nih.gov/pmc/articles/PMC4544993/
https://ncbi.nlm.nih.gov/pubmed/26273961
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3791/52711
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