Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Owing to its relativistic low-energy charge carriers, the interaction between graphene and various impurities leads to a wealth of new physics and degrees of freedom to control electronic devices. In particular, the behavior of graphene’s charge carriers in response to potentials from charged Coulom...

Descripció completa

Guardat en:
Dades bibliogràfiques
Publicat a:J Vis Exp
Autors principals: Jung, Han Sae, Tsai, Hsin-Zon, Wong, Dillon, Germany, Chad, Kahn, Salman, Kim, Youngkyou, Aikawa, Andrew S., Desai, Dhruv K., Rodgers, Griffin F., Bradley, Aaron J., Velasco, Jairo, Watanabe, Kenji, Taniguchi, Takashi, Wang, Feng, Zettl, Alex, Crommie, Michael F.
Format: Artigo
Idioma:Inglês
Publicat: MyJove Corporation 2015
Matèries:
Engineering
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC4544993/
https://ncbi.nlm.nih.gov/pubmed/26273961
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3791/52711
Etiquetes: Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!

Ítems similars