Trimethylaluminum and Oxygen Atomic Layer Deposition on Hydroxyl-Free Cu(111)

[Image: see text] Atomic layer deposition (ALD) of alumina using trimethylaluminum (TMA) has technological importance in microelectronics. This process has demonstrated a high potential in applications of protective coatings on Cu surfaces for control of diffusion of Cu in Cu(2)S films in photovolta...

Descripció completa

Guardat en:
Dades bibliogràfiques
Publicat a:ACS Appl Mater Interfaces
Autors principals: Gharachorlou, Amir, Detwiler, Michael D., Gu, Xiang-Kui, Mayr, Lukas, Klötzer, Bernhard, Greeley, Jeffrey, Reifenberger, Ronald G., Delgass, W. Nicholas, Ribeiro, Fabio H., Zemlyanov, Dmitry Y.
Format: Artigo
Idioma:Inglês
Publicat: American Chemical Society 2015
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC4528256/
https://ncbi.nlm.nih.gov/pubmed/26158796
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsami.5b03598
Etiquetes: Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!

Ítems similars