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Epitaxial diamond-hexagonal silicon nano-ribbon growth on (001) silicon
Silicon crystallizes in the diamond-cubic phase and shows only a weak emission at 1.1 eV. Diamond-hexagonal silicon however has an indirect bandgap at 1.5 eV and has therefore potential for application in opto-electronic devices. Here we discuss a method based on advanced silicon device processing t...
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| Vydáno v: | Sci Rep |
|---|---|
| Hlavní autoři: | , , , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group
2015
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4523848/ https://ncbi.nlm.nih.gov/pubmed/26239286 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep12692 |
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