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Effects of a Cu(x)O Buffer Layer on a SiO(x)-Based Memory Device in a Vaporless Environment
The resistive switching characteristics of the Cu/SiO(x)/Pt structure (control sample) exhibited a direct correlation to humidity. The H(2)O vapor formed the Cu oxide at the Cu/SiO(x) interface, and Cu ions were injected from the Cu oxide into the SiO(x) layer, thus improving the resistive switching...
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| Publicado no: | Nanoscale Res Lett |
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| Main Authors: | , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4501331/ https://ncbi.nlm.nih.gov/pubmed/26168868 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-1003-3 |
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